N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 79A continuous drain current. This through-hole component offers a low 8.4mΩ Rds On resistance and 110W maximum power dissipation. Key switching characteristics include a 13ns turn-on delay and 46ns fall time, with an input capacitance of 2.29nF. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant silicon FET is housed in a TO-262 package.
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
International Rectifier IRF1018ESLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
79A
Drain to Source Breakdown Voltage
60V
Drain to Source Voltage (Vdss)
60V
Fall Time
46ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.29nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
8.4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
4V
Turn-Off Delay Time
55ns
Turn-On Delay Time
13ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1018ESLPBF Datasheet
Download the complete datasheet for International Rectifier IRF1018ESLPBF to view detailed technical specifications.
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