International Rectifier
IRF1018ESPBF
Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
PackageD2PAK
MountingSurface Mount
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Technical Specifications
International Rectifier IRF1018ESPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
79A
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
8.4MR
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
2.29nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
55ns
Turn-On Delay Time
13ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1018ESPBF Datasheet
Download the complete datasheet for International Rectifier IRF1018ESPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.