International Rectifier
IRF1310N
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220AB
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Technical Specifications
International Rectifier IRF1310N technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 41A |
| Drain to Source Voltage (Vdss) | 100V |
| Lead Pitch | 2.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF1310N Datasheet
Download the complete datasheet for International Rectifier IRF1310N to view detailed technical specifications.
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