International Rectifier
IRF1310NLPBF
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262
MountingThrough Hole
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Technical Specifications
International Rectifier IRF1310NLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
42A
Drain to Source Voltage (Vdss)
100V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Height
10.54mm
Input Capacitance
1.9nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Through Hole
Nominal Vgs
4V
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Turn-Off Delay Time
45ns
Turn-On Delay Time
11ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1310NLPBF Datasheet
Download the complete datasheet for International Rectifier IRF1310NLPBF to view detailed technical specifications.
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