International Rectifier
IRF1310NLPBF
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262
MountingThrough Hole
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Technical Specifications
International Rectifier IRF1310NLPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 10.54mm |
| Input Capacitance | 1.9nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF1310NLPBF Datasheet
Download the complete datasheet for International Rectifier IRF1310NLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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