N-Channel Power MOSFET, 100V Drain-Source Voltage, 42A Continuous Drain Current, and 36mΩ Max Drain-Source On-Resistance. Features a 160W Max Power Dissipation, 1.9nF Input Capacitance, and 4V Nominal Gate-Source Voltage. Operates from -55°C to 175°C with a 20V Gate-Source Voltage rating. Packaged in a TO-220AB through-hole mount with a lead-free, RoHS-compliant design.
PackageTO-220AB
Current Rating42A
MountingThrough Hole
Power160W
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Technical Specifications
International Rectifier IRF1310NPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
42A
Current Rating
42A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
36mR
Dual Supply Voltage
100V
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
1.9nF
Lead Free
Lead Free
Lead Pitch
2.54mm
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Power Dissipation
160W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
45ns
Turn-On Delay Time
11ns
DC Rated Voltage
100V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1310NPBF Datasheet
Download the complete datasheet for International Rectifier IRF1310NPBF to view detailed technical specifications.
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