International Rectifier
IRF1310NS
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
PackageD2PAK
MountingSurface Mount
Power3.8W
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Technical Specifications
International Rectifier IRF1310NS technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
42A
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Number of Elements
1
Power Dissipation
3.8W
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF1310NS Datasheet
Download the complete datasheet for International Rectifier IRF1310NS to view detailed technical specifications.
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