
N-Channel Power MOSFET, D2PAK package, offering 100V drain-source breakdown voltage and 42A continuous drain current. Features low 36mΩ drain-source on-resistance and 1.9nF input capacitance. Operates from -55°C to 175°C with 3.8W power dissipation. Includes fast switching times with 11ns turn-on and 40ns fall times. Surface mountable with lead-free and RoHS compliant construction.
International Rectifier IRF1310NSPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 42A |
| Current Rating | 42A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 36mR |
| Dual Supply Voltage | 100V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.9nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Termination | SMD/SMT |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 100V |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF1310NSPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
