N-Channel Power MOSFET, D2PAK package, offering 100V drain-source breakdown voltage and 42A continuous drain current. Features low 36mΩ drain-source on-resistance and 1.9nF input capacitance. Operates from -55°C to 175°C with 3.8W power dissipation. Includes fast switching times with 11ns turn-on and 40ns fall times. Surface mountable with lead-free and RoHS compliant construction.
PackageD2PAK
Current Rating42A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRF1310NSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
42A
Current Rating
42A
Drain to Source Breakdown Voltage
100V
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
36mR
Dual Supply Voltage
100V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.9nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
3.8W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
45ns
Turn-On Delay Time
11ns
DC Rated Voltage
100V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1310NSPBF Datasheet
Download the complete datasheet for International Rectifier IRF1310NSPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
