N-Channel Power MOSFET, 40V Drain-Source Voltage, 162A Continuous Drain Current, and 0.004 Ohm Max On-Resistance. Features include 200W Max Power Dissipation, 175°C Max Operating Temperature, and a D2PAK surface-mount package. This silicon Metal-oxide Semiconductor FET offers fast switching speeds with a 17ns turn-on delay and 26ns fall time. It is RoHS compliant and lead-free.
PackageD2PAK
Current Rating162A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF1404SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 162A |
| Current Rating | 162A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 4MR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 7.36nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 40V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF1404SPBF Datasheet
Download the complete datasheet for International Rectifier IRF1404SPBF to view detailed technical specifications.
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