IRF1404SPBF

N-Channel Power MOSFET, 40V Drain-Source Voltage, 162A Continuous Drain Current, and 0.004 Ohm Max On-Resistance. Features include 200W Max Power Dissipation, 175°C Max Operating Temperature, and a D2PAK surface-mount package. This silicon Metal-oxide Semiconductor FET offers fast switching speeds with a 17ns turn-on delay and 26ns fall time. It is RoHS compliant and lead-free.