International Rectifier
IRF1404ZGPBF
Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power220W
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Technical Specifications
International Rectifier IRF1404ZGPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
190A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Fall Time
58ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.34nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
220W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
220W
Radiation Hardening
No
Rds On Max
3.7mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
36ns
Turn-On Delay Time
18ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1404ZGPBF Datasheet
Download the complete datasheet for International Rectifier IRF1404ZGPBF to view detailed technical specifications.
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