
N-Channel Power MOSFET, TO-220AB package, featuring 55V drain-source voltage and 169A continuous drain current. Achieves low on-resistance of 5.3mΩ at a nominal gate-source voltage of 4V. Supports a maximum power dissipation of 330W and operates across a wide temperature range from -55°C to 175°C. This through-hole mounted component offers fast switching speeds with turn-on delay of 13ns and fall time of 110ns.
International Rectifier IRF1405PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 169A |
| Current Rating | 169A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 5.3MR |
| Dual Supply Voltage | 55V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 5.48nF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| On-State Resistance | 5.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 55V |
| Width | 4.69mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF1405PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
