N-Channel Power MOSFET, TO-220AB package, featuring 55V drain-source voltage and 169A continuous drain current. Achieves low on-resistance of 5.3mΩ at a nominal gate-source voltage of 4V. Supports a maximum power dissipation of 330W and operates across a wide temperature range from -55°C to 175°C. This through-hole mounted component offers fast switching speeds with turn-on delay of 13ns and fall time of 110ns.
PackageTO-220AB
Current Rating169A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF1405PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
169A
Current Rating
169A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
5.3MR
Dual Supply Voltage
55V
Fall Time
110ns
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
5.48nF
Lead Free
Lead Free
Lead Pitch
2.54mm
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
330W
Mount
Through Hole
Nominal Vgs
4V
On-State Resistance
5.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
130ns
Turn-On Delay Time
13ns
DC Rated Voltage
55V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1405PBF Datasheet
Download the complete datasheet for International Rectifier IRF1405PBF to view detailed technical specifications.
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