International Rectifier
IRF1405ZSTRRPBF
Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power230W
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Technical Specifications
International Rectifier IRF1405ZSTRRPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
150A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
4.9mR
Drain to Source Voltage (Vdss)
55V
Fall Time
82ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.78nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
230W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
230W
Radiation Hardening
No
Rds On Max
4.9mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
48ns
Turn-On Delay Time
18ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1405ZSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF1405ZSTRRPBF to view detailed technical specifications.
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