N-Channel Power MOSFET, 75V Drain-Source Voltage, 130A Continuous Drain Current, and 7.8mΩ Max On-Resistance. This silicon, metal-oxide semiconductor FET features a TO-220AB package for through-hole mounting. It offers a maximum power dissipation of 330W and operates across a wide temperature range from -55°C to 175°C. Key electrical characteristics include 5.6nF input capacitance and a nominal gate-source voltage of 4V. This component is RoHS compliant and lead-free.
PackageTO-220AB
Current Rating130A
MountingThrough Hole
Power330W
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Technical Specifications
International Rectifier IRF1407PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 130A |
| Current Rating | 130A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 7.8MR |
| Dual Supply Voltage | 75V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 5.6nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| On-State Resistance | 7.8R |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 75V |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF1407PBF Datasheet
Download the complete datasheet for International Rectifier IRF1407PBF to view detailed technical specifications.
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