N-Channel Power MOSFET, 75V Drain-Source Voltage, 130A Continuous Drain Current, and 7.8mΩ Max On-Resistance. This silicon, metal-oxide semiconductor FET features a TO-220AB package for through-hole mounting. It offers a maximum power dissipation of 330W and operates across a wide temperature range from -55°C to 175°C. Key electrical characteristics include 5.6nF input capacitance and a nominal gate-source voltage of 4V. This component is RoHS compliant and lead-free.
PackageTO-220AB
Current Rating130A
MountingThrough Hole
Power330W
Quick Jump:
Technical Specifications
International Rectifier IRF1407PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
130A
Current Rating
130A
Drain to Source Voltage (Vdss)
75V
Drain-source On Resistance-Max
7.8MR
Dual Supply Voltage
75V
Gate to Source Voltage (Vgs)
20V
Height
16.51mm
Input Capacitance
5.6nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
330W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
On-State Resistance
7.8R
Power Dissipation
330W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Turn-Off Delay Time
150ns
Turn-On Delay Time
11ns
DC Rated Voltage
75V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1407PBF Datasheet
Download the complete datasheet for International Rectifier IRF1407PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
