
The IRF2204LPBF is a high-power N-channel MOSFET with a maximum drain current of 170A and a maximum drain to source breakdown voltage of 40V. It is designed for high-power applications and features a maximum power dissipation of 200W. The device is packaged in a lead-free TO-262-3 package and is suitable for use in a variety of applications including power supplies and motor control circuits. The IRF2204LPBF is RoHS compliant and is suitable for use in lead-free applications.
International Rectifier IRF2204LPBF technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 170A |
| Current Rating | 170A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.89nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Rds On Max | 3.6mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| DC Rated Voltage | 40V |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF2204LPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
