International Rectifier
IRF2204LPBF
Power Field-Effect Transistor, 75A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
Current Rating170A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRF2204LPBF technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
170A
Current Rating
170A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.89nF
Lead Free
Lead Free
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
200W
Rds On Max
3.6mR
RoHS Compliant
Yes
Series
HEXFET®
DC Rated Voltage
40V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF2204LPBF Datasheet
Download the complete datasheet for International Rectifier IRF2204LPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
