N-channel MOSFET, 40V drain-source breakdown voltage, 170A continuous drain current, and 0.0036 ohm drain-source on-resistance. This silicon metal-oxide semiconductor FET features a D2PAK surface-mount package, 200W maximum power dissipation, and a maximum operating temperature of 175°C. It includes a 4V threshold voltage, 5.89nF input capacitance, and 62ns turn-off delay.
PackageD2PAK
Current Rating170A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF2204SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 170A |
| Current Rating | 170A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 5.89nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 40V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF2204SPBF Datasheet
Download the complete datasheet for International Rectifier IRF2204SPBF to view detailed technical specifications.
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