N-channel MOSFET, 40V drain-source breakdown voltage, 170A continuous drain current, and 0.0036 ohm drain-source on-resistance. This silicon metal-oxide semiconductor FET features a D2PAK surface-mount package, 200W maximum power dissipation, and a maximum operating temperature of 175°C. It includes a 4V threshold voltage, 5.89nF input capacitance, and 62ns turn-off delay.
PackageD2PAK
Current Rating170A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF2204SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
170A
Current Rating
170A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
5.89nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Surface Mount
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
200W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
62ns
Turn-On Delay Time
15ns
DC Rated Voltage
40V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF2204SPBF Datasheet
Download the complete datasheet for International Rectifier IRF2204SPBF to view detailed technical specifications.
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