International Rectifier
IRF250
Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
PackageTO-204AA
MountingThrough Hole
Power150W
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Technical Specifications
International Rectifier IRF250 technical specifications.
General
Package/Case
TO-204AA
Continuous Drain Current (ID)
30A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
85mR
Drain to Source Voltage (Vdss)
200V
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Power Dissipation
150W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF250 Datasheet
Download the complete datasheet for International Rectifier IRF250 to view detailed technical specifications.
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