N-Channel Power MOSFET featuring 55V drain-source voltage and 75A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 0.0047 ohm on-state resistance and a maximum power dissipation of 330W. Designed for through-hole mounting in a TO-220AB plastic package, it operates from -55°C to 175°C and is RoHS compliant.
PackageTO-220AB
Current Rating75A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF2805PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
75A
Current Rating
75A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
4.7MR
Dual Supply Voltage
55V
Gate to Source Voltage (Vgs)
20V
Height
16.51mm
Input Capacitance
5.11nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
330W
Mount
Through Hole
Nominal Vgs
4V
On-State Resistance
4.7R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
68ns
Turn-On Delay Time
14ns
DC Rated Voltage
55V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF2805PBF Datasheet
Download the complete datasheet for International Rectifier IRF2805PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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