International Rectifier
IRF2805S
Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
PackageD2PAK
MountingSurface Mount
Power200W
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Technical Specifications
International Rectifier IRF2805S technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 135A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRF2805S Datasheet
Download the complete datasheet for International Rectifier IRF2805S to view detailed technical specifications.
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