IRF2805STRRPBF

Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

PackageTO-263-3

MountingSurface Mount

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International Rectifier IRF2805STRRPBF technical specifications.

Package/Case

TO-263-3

Continuous Drain Current (ID)

135A

Drain to Source Voltage (Vdss)

55V

Input Capacitance

5.11nF

Max Power Dissipation

200W

Mount

Surface Mount

Package Quantity

800

Packaging

Tape and Reel

Rds On Max

4.7mR

RoHS Compliant

Yes

Series

HEXFET®

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.