
N-Channel Power MOSFET, 75V Drain-Source Voltage, 89A Continuous Drain Current, and 9.4mΩ Max Drain-Source On-Resistance. Features a 170W Max Power Dissipation and operates across a wide temperature range from -55°C to 175°C. This through-hole component is housed in a TO-262 package and offers fast switching speeds with turn-on delay of 18ns and turn-off delay of 40ns. It is RoHS compliant and lead-free.
International Rectifier IRF2807ZLPBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 89A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 9.4MR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.27nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 170W |
| Radiation Hardening | No |
| Rds On Max | 9.4mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 75V |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF2807ZLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
