N-Channel Power MOSFET, 75V Drain-Source Voltage, 89A Continuous Drain Current, and 9.4mΩ Max Drain-Source On-Resistance. Features a 170W Max Power Dissipation and operates across a wide temperature range from -55°C to 175°C. This through-hole component is housed in a TO-262 package and offers fast switching speeds with turn-on delay of 18ns and turn-off delay of 40ns. It is RoHS compliant and lead-free.
PackageTO-262
Current Rating75A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF2807ZLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
89A
Current Rating
75A
Drain to Source Breakdown Voltage
75V
Drain to Source Voltage (Vdss)
75V
Drain-source On Resistance-Max
9.4MR
Fall Time
45ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.27nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
170W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
170W
Radiation Hardening
No
Rds On Max
9.4mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
40ns
Turn-On Delay Time
18ns
DC Rated Voltage
75V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF2807ZLPBF Datasheet
Download the complete datasheet for International Rectifier IRF2807ZLPBF to view detailed technical specifications.
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