N-Channel Power MOSFET, TO-262 package, featuring 30V drain-source breakdown voltage and 75A continuous drain current. Offers a low 2.4mΩ Rds On resistance and 290W maximum power dissipation. Operates from -55°C to 175°C with fast switching times including a 19ns turn-on delay. RoHS compliant with through-hole mounting.
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power290W
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Technical Specifications
International Rectifier IRF2903ZLPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 6.32nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 231W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 290W |
| Radiation Hardening | No |
| Rds On Max | 2.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 97ns |
| Turn-On Delay Time | 19ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF2903ZLPBF Datasheet
Download the complete datasheet for International Rectifier IRF2903ZLPBF to view detailed technical specifications.
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