N-Channel Power MOSFET, TO-262 package, featuring 30V drain-source breakdown voltage and 75A continuous drain current. Offers a low 2.4mΩ Rds On resistance and 290W maximum power dissipation. Operates from -55°C to 175°C with fast switching times including a 19ns turn-on delay. RoHS compliant with through-hole mounting.
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power290W
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Technical Specifications
International Rectifier IRF2903ZLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
75A
Drain to Source Breakdown Voltage
30V
Drain to Source Voltage (Vdss)
30V
Fall Time
100ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
6.32nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
231W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
290W
Radiation Hardening
No
Rds On Max
2.4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
97ns
Turn-On Delay Time
19ns
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF2903ZLPBF Datasheet
Download the complete datasheet for International Rectifier IRF2903ZLPBF to view detailed technical specifications.
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