International Rectifier
IRF320
Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
MountingThrough Hole
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Technical Specifications
International Rectifier IRF320 technical specifications.
General
Continuous Drain Current (ID)
3.3A
Mount
Through Hole
Packaging
Bulk
Radiation Hardening
No
RoHS Compliant
No
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF320 Datasheet
Download the complete datasheet for International Rectifier IRF320 to view detailed technical specifications.
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