N-Channel Power MOSFET, 55V Drain-Source Voltage, 110A Continuous Drain Current, and 8mΩ Rds On. This silicon Metal-Oxide Semiconductor FET features a TO-262 package with through-hole mounting. It offers a maximum power dissipation of 200W and operates across a temperature range of -55°C to 175°C. Key switching characteristics include a 14ns turn-on delay and 50ns turn-off delay.
PackageTO-262
Current Rating110A
MountingThrough Hole
Power200W
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Technical Specifications
International Rectifier IRF3205LPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
110A
Current Rating
110A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
8mR
Drain to Source Voltage (Vdss)
55V
Fall Time
65ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
3.247nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
200W
Radiation Hardening
No
Rds On Max
8mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
50ns
Turn-On Delay Time
14ns
DC Rated Voltage
55V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3205LPBF Datasheet
Download the complete datasheet for International Rectifier IRF3205LPBF to view detailed technical specifications.
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