N-Channel Power MOSFET, 55V drain-source voltage, 110A continuous drain current, and 8mΩ maximum drain-source on-resistance. Features a 20V gate-source voltage, 200W maximum power dissipation, and operates from -55°C to 175°C. This silicon, metal-oxide semiconductor FET utilizes a TO-220AB package with through-hole mounting and is lead-free and RoHS compliant. Key switching parameters include 14ns turn-on delay, 50ns turn-off delay, and 65ns fall time.
PackageTO-220AB
Current Rating110A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF3205PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 110A |
| Current Rating | 110A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8MR |
| Dual Supply Voltage | 55V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 3.247nF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| On-State Resistance | 8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 55V |
| Width | 4.69mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3205PBF Datasheet
Download the complete datasheet for International Rectifier IRF3205PBF to view detailed technical specifications.
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