N-Channel Power MOSFET, 55V drain-source voltage, 110A continuous drain current, and 8mΩ maximum drain-source on-resistance. Features a 20V gate-source voltage, 200W maximum power dissipation, and operates from -55°C to 175°C. This silicon, metal-oxide semiconductor FET utilizes a TO-220AB package with through-hole mounting and is lead-free and RoHS compliant. Key switching parameters include 14ns turn-on delay, 50ns turn-off delay, and 65ns fall time.
PackageTO-220AB
Current Rating110A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF3205PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
110A
Current Rating
110A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
8MR
Dual Supply Voltage
55V
Fall Time
65ns
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
3.247nF
Lead Free
Lead Free
Lead Pitch
2.54mm
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Nominal Vgs
4V
On-State Resistance
8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
50ns
Turn-On Delay Time
14ns
DC Rated Voltage
55V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3205PBF Datasheet
Download the complete datasheet for International Rectifier IRF3205PBF to view detailed technical specifications.
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