IRF3205STRR

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

PackageTO-263-3

MountingSurface Mount

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International Rectifier IRF3205STRR technical specifications.

Package/Case

TO-263-3

Continuous Drain Current (ID)

110A

Drain to Source Voltage (Vdss)

55V

Input Capacitance

3.247nF

Max Power Dissipation

200W

Mount

Surface Mount

Package Quantity

800

Packaging

Tape and Reel

Rds On Max

8mR

RoHS Compliant

Series

HEXFET®

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.