N-Channel Power MOSFET, D2PAK package, featuring 55V drain-source breakdown voltage and 110A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 8mΩ Rds On resistance and 200W maximum power dissipation. Designed for surface mounting, it operates from -55°C to 175°C and includes fast switching characteristics with turn-on delay of 14ns and fall time of 65ns. Lead-free and RoHS compliant.
PackageD2PAK
Current Rating110A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3205STRRPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
110A
Current Rating
110A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Fall Time
65ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.247nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
200W
Radiation Hardening
No
Rds On Max
8mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
50ns
Turn-On Delay Time
14ns
DC Rated Voltage
55V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3205STRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF3205STRRPBF to view detailed technical specifications.
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