N-Channel Power MOSFET, D2PAK package, featuring 55V drain-source breakdown voltage and 110A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 8mΩ Rds On resistance and 200W maximum power dissipation. Designed for surface mounting, it operates from -55°C to 175°C and includes fast switching characteristics with turn-on delay of 14ns and fall time of 65ns. Lead-free and RoHS compliant.
PackageD2PAK
Current Rating110A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3205STRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 110A |
| Current Rating | 110A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.247nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3205STRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF3205STRRPBF to view detailed technical specifications.
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