International Rectifier
IRF323
Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
PackageTO-3
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Technical Specifications
International Rectifier IRF323 technical specifications.
General
| Package/Case | TO-3 |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 350V |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF323 Datasheet
Download the complete datasheet for International Rectifier IRF323 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.