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INTERNATIONAL RECTIFIER

IRF330

Datasheet
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
International Rectifier

IRF330

Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

  1. Semiconductors
  2. Discrete Semiconductors
  1. Semiconductors
  2. Discrete Semiconductors
  3. Transistors
  4. MOSFETs

PackageTO-204AA
Current Rating5.5A
MountingThrough Hole
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Technical Specifications

International Rectifier IRF330 technical specifications.

General

Package/Case
TO-204AA
Continuous Drain Current (ID)
5.5A
Current Rating
5.5A
Drain to Source Voltage (Vdss)
400V
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
75W
Mount
Through Hole
Nominal Vgs
4V
Packaging
Bulk
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
DC Rated Voltage
400V

Compliance

RoHS
Not CompliantNo

Datasheet

International Rectifier IRF330 Datasheet

Download the complete datasheet for International Rectifier IRF330 to view detailed technical specifications.

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