N-Channel Power MOSFET, 150V Drain-Source Voltage, 23A Continuous Drain Current, and 70mΩ Max Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-220AB package for through-hole mounting, a maximum power dissipation of 94W, and operates across a wide temperature range from -55°C to 175°C. It offers a 20V Gate-to-Source Voltage and a 4V nominal Vgs, with fast switching characteristics including a 9.6ns turn-on delay. This RoHS compliant component is designed for high-performance power applications.
PackageTO-220AB
Current Rating27A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF3315PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 23A |
| Current Rating | 27A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 82mR |
| Dual Supply Voltage | 150V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 70mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | Through Hole |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 9.6ns |
| DC Rated Voltage | 150V |
| Width | 4.69mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3315PBF Datasheet
Download the complete datasheet for International Rectifier IRF3315PBF to view detailed technical specifications.
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