N-Channel Power MOSFET, 150V Drain-Source Voltage, 23A Continuous Drain Current, and 70mΩ Max Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-220AB package for through-hole mounting, a maximum power dissipation of 94W, and operates across a wide temperature range from -55°C to 175°C. It offers a 20V Gate-to-Source Voltage and a 4V nominal Vgs, with fast switching characteristics including a 9.6ns turn-on delay. This RoHS compliant component is designed for high-performance power applications.
PackageTO-220AB
Current Rating27A
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier IRF3315PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
23A
Current Rating
27A
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
82mR
Dual Supply Voltage
150V
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
1.3nF
Lead Free
Lead Free
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
94W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
50
Packaging
Rail/Tube
Rds On Max
70mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
Through Hole
Turn-Off Delay Time
49ns
Turn-On Delay Time
9.6ns
DC Rated Voltage
150V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3315PBF Datasheet
Download the complete datasheet for International Rectifier IRF3315PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
