IRF3315S

Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, D2PAK-3

PackageTO-263-3

MountingSurface Mount

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International Rectifier IRF3315S technical specifications.

Package/Case

TO-263-3

Continuous Drain Current (ID)

21A

Drain to Source Voltage (Vdss)

150V

Input Capacitance

1.3nF

Max Power Dissipation

3.8W

Mount

Surface Mount

Package Quantity

Packaging

Rail/Tube

Rds On Max

82mR

RoHS Compliant

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.