N-Channel Power MOSFET featuring 150V drain-source voltage and 43A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.042-ohm drain-source on-resistance and a maximum power dissipation of 200W. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 175°C. Key electrical characteristics include 2.4nF input capacitance and fast switching times with a 12ns turn-on delay.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
International Rectifier IRF3415PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 43A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 42MR |
| Dual Supply Voltage | 150V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 2.4nF |
| Lead Pitch | 2.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 71ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3415PBF Datasheet
Download the complete datasheet for International Rectifier IRF3415PBF to view detailed technical specifications.
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