N-Channel Power MOSFET featuring 150V drain-source voltage and 43A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.042-ohm drain-source on-resistance and a maximum power dissipation of 200W. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 175°C. Key electrical characteristics include 2.4nF input capacitance and fast switching times with a 12ns turn-on delay.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
International Rectifier IRF3415PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
43A
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
42MR
Dual Supply Voltage
150V
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
2.4nF
Lead Pitch
2.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
71ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3415PBF Datasheet
Download the complete datasheet for International Rectifier IRF3415PBF to view detailed technical specifications.
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