The IRF3515L is a HEXFET power transistor with a maximum drain to source voltage of 150V and a continuous drain current of 41A. It is packaged in a TO-262-3 through hole package and has a maximum power dissipation of 200W. The device is not RoHS compliant and contains lead. It is rated for operation over a temperature range of -40°C to 175°C.
PackageTO-262-3
Current Rating41A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF3515L technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 41A |
| Current Rating | 41A |
| Drain to Source Voltage (Vdss) | 150V |
| Input Capacitance | 2.26nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 45mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | 150V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF3515L Datasheet
Download the complete datasheet for International Rectifier IRF3515L to view detailed technical specifications.
No datasheet is available for this part.