N-Channel Power MOSFET featuring 20V drain-source breakdown voltage and 77A continuous drain current. Offers a low 8.5mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-262 package, this silicon Metal-oxide Semiconductor FET operates from -55°C to 175°C with 88W maximum power dissipation. Key electrical characteristics include a 4.8ns fall time and 17ns turn-off delay.
PackageTO-262
Current Rating77A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3706LPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 77A |
| Current Rating | 77A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 8.5MR |
| Fall Time | 4.8ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.41nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 88W |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 17ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3706LPBF Datasheet
Download the complete datasheet for International Rectifier IRF3706LPBF to view detailed technical specifications.
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