N-Channel Power MOSFET featuring 20V drain-source breakdown voltage and 77A continuous drain current. Offers a low 8.5mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-262 package, this silicon Metal-oxide Semiconductor FET operates from -55°C to 175°C with 88W maximum power dissipation. Key electrical characteristics include a 4.8ns fall time and 17ns turn-off delay.
PackageTO-262
Current Rating77A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRF3706LPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
77A
Current Rating
77A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
10.5mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
8.5MR
Fall Time
4.8ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
2.41nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
88W
Rds On Max
8.5mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
17ns
DC Rated Voltage
20V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3706LPBF Datasheet
Download the complete datasheet for International Rectifier IRF3706LPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
