N-Channel Power MOSFET featuring 30V drain-source voltage and 62A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.012 ohm drain-source on-resistance. Packaged in a TO-220AB through-hole mount, it operates from -55°C to 175°C with a maximum power dissipation of 87W. RoHS compliant and lead-free.
PackageTO-220AB
Current Rating62A
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier IRF3708PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
62A
Current Rating
62A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
12MR
Gate to Source Voltage (Vgs)
12V
Height
8.77mm
Input Capacitance
2.417nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
87W
Mount
Through Hole
Nominal Vgs
2V
Package Quantity
50
Packaging
Rail/Tube
Rds On Max
12mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
2V
Turn-Off Delay Time
17.6ns
Turn-On Delay Time
7.2ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3708PBF Datasheet
Download the complete datasheet for International Rectifier IRF3708PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
