N-Channel Power MOSFET featuring 30V drain-source voltage and 62A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.012 ohm drain-source on-resistance. Packaged in a TO-220AB through-hole mount, it operates from -55°C to 175°C with a maximum power dissipation of 87W. RoHS compliant and lead-free.
PackageTO-220AB
Current Rating62A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF3708PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 62A |
| Current Rating | 62A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 12MR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 8.77mm |
| Input Capacitance | 2.417nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 87W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 12mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 17.6ns |
| Turn-On Delay Time | 7.2ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3708PBF Datasheet
Download the complete datasheet for International Rectifier IRF3708PBF to view detailed technical specifications.
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