N-Channel Power MOSFET, 100V Drain-Source Voltage, 57A Continuous Drain Current, and 23mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a TO-263 package with SMD/SMT termination, a maximum power dissipation of 200W, and an operating temperature range of -55°C to 175°C. It is RoHS compliant and lead-free.
PackageTO-263
Current Rating57A
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Technical Specifications
International Rectifier IRF3710STRLPBF technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
57A
Current Rating
57A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
23MR
Dual Supply Voltage
100V
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
DC Rated Voltage
100V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3710STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF3710STRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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