N-Channel Power MOSFET, 100V Drain-Source Voltage, 57A Continuous Drain Current, and 23mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a TO-263 package with SMD/SMT termination, a maximum power dissipation of 200W, and an operating temperature range of -55°C to 175°C. It is RoHS compliant and lead-free.
PackageTO-263
Current Rating57A
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Technical Specifications
International Rectifier IRF3710STRLPBF technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 57A |
| Current Rating | 57A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 23MR |
| Dual Supply Voltage | 100V |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3710STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF3710STRLPBF to view detailed technical specifications.
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