International Rectifier
IRF3710ZGPBF
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND LEAD FREE, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power160W
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Technical Specifications
International Rectifier IRF3710ZGPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
59A
Drain to Source Breakdown Voltage
100V
Drain to Source Voltage (Vdss)
100V
Fall Time
56ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.9nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
18mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
41ns
Turn-On Delay Time
17ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3710ZGPBF Datasheet
Download the complete datasheet for International Rectifier IRF3710ZGPBF to view detailed technical specifications.
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