N-Channel Power MOSFET, D2PAK package, featuring 100V drain-source breakdown voltage and 59A continuous drain current. Offers a low 18mΩ Rds On resistance and 160W maximum power dissipation. Designed for surface mounting with a tape and reel package, this silicon metal-oxide semiconductor FET boasts fast switching speeds with turn-on delay of 17ns and fall time of 56ns. Operating temperature range is -55°C to 175°C.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power160W
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Technical Specifications
International Rectifier IRF3710ZSTRRPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
59A
Drain to Source Breakdown Voltage
100V
Drain to Source Voltage (Vdss)
100V
Fall Time
56ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
2.9nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
18mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
41ns
Turn-On Delay Time
17ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3710ZSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF3710ZSTRRPBF to view detailed technical specifications.
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