N-Channel Power MOSFET, D2PAK package, featuring 100V drain-source breakdown voltage and 59A continuous drain current. Offers a low 18mΩ Rds On resistance and 160W maximum power dissipation. Designed for surface mounting with a tape and reel package, this silicon metal-oxide semiconductor FET boasts fast switching speeds with turn-on delay of 17ns and fall time of 56ns. Operating temperature range is -55°C to 175°C.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power160W
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Technical Specifications
International Rectifier IRF3710ZSTRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 59A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 56ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 2.9nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 17ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3710ZSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF3710ZSTRRPBF to view detailed technical specifications.
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