International Rectifier
IRF3711LPBF
Power Field-Effect Transistor, 110A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power120W
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Technical Specifications
International Rectifier IRF3711LPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
110A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
8.5mR
Drain to Source Voltage (Vdss)
20V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.98nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
120W
Radiation Hardening
No
Rds On Max
6mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
17ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3711LPBF Datasheet
Download the complete datasheet for International Rectifier IRF3711LPBF to view detailed technical specifications.
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