N-Channel Power MOSFET, TO-220AB package, featuring 20V drain-source breakdown voltage and 110A continuous drain current. Offers a low 6mΩ maximum drain-source on-resistance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 120W. Includes 12ns turn-on and 17ns turn-off delay times.
PackageTO-220AB
Current Rating110A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3711PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
110A
Current Rating
110A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
8.5mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
6MR
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
2.98nF
Lead Free
Lead Free
Length
10.54mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
120W
Radiation Hardening
No
Rds On Max
6mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
3V
Turn-Off Delay Time
17ns
Turn-On Delay Time
12ns
DC Rated Voltage
20V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3711PBF Datasheet
Download the complete datasheet for International Rectifier IRF3711PBF to view detailed technical specifications.
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