International Rectifier
IRF3711S
Power Field-Effect Transistor, 110A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
PackageTO-263-3
Current Rating110A
MountingSurface Mount
Power120W
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Technical Specifications
International Rectifier IRF3711S technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 110A |
| Current Rating | 110A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 2.98nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 120W |
| Rds On Max | 6mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF3711S Datasheet
Download the complete datasheet for International Rectifier IRF3711S to view detailed technical specifications.
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