N-Channel Power MOSFET, 110A continuous drain current, 20V drain-source breakdown voltage, and 6mΩ maximum drain-source on-resistance. Features a D2PAK surface-mount package, 120W power dissipation, and operates within a temperature range of -55°C to 150°C. Includes 12ns fall time, 17ns turn-off delay, and 12ns turn-on delay.
PackageD2PAK
Current Rating110A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3711SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
110A
Current Rating
110A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
8.5mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
6MR
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
2.98nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
120W
Radiation Hardening
No
Rds On Max
6mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
3V
Turn-Off Delay Time
17ns
Turn-On Delay Time
12ns
DC Rated Voltage
20V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3711SPBF Datasheet
Download the complete datasheet for International Rectifier IRF3711SPBF to view detailed technical specifications.
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