N-Channel Power MOSFET, D2PAK package, featuring 20V drain-source breakdown voltage and 110A continuous drain current. Offers low on-resistance of 6mΩ (Rds On Max) and 8.5mΩ drain-to-source resistance. Operates with a gate-to-source voltage up to 20V and boasts a maximum power dissipation of 120W. Includes fast switching characteristics with turn-on delay of 12ns and fall time of 12ns. This surface-mount component is lead-free and RoHS compliant.
PackageD2PAK
Current Rating110A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3711STRRPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
110A
Current Rating
110A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
8.5mR
Drain to Source Voltage (Vdss)
20V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
2.98nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
120W
Radiation Hardening
No
Rds On Max
6mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
17ns
Turn-On Delay Time
12ns
DC Rated Voltage
20V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3711STRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF3711STRRPBF to view detailed technical specifications.
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