
N-Channel Power MOSFET, D2PAK package, featuring 20V drain-source breakdown voltage and 110A continuous drain current. Offers low on-resistance of 6mΩ (Rds On Max) and 8.5mΩ drain-to-source resistance. Operates with a gate-to-source voltage up to 20V and boasts a maximum power dissipation of 120W. Includes fast switching characteristics with turn-on delay of 12ns and fall time of 12ns. This surface-mount component is lead-free and RoHS compliant.
International Rectifier IRF3711STRRPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 110A |
| Current Rating | 110A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 2.98nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 20V |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF3711STRRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
