International Rectifier
IRF4104GPBF
Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND LEAD FREE, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power140W
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Technical Specifications
International Rectifier IRF4104GPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
75A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Fall Time
77ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
140W
Radiation Hardening
No
Rds On Max
5.5mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
38ns
Turn-On Delay Time
16ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF4104GPBF Datasheet
Download the complete datasheet for International Rectifier IRF4104GPBF to view detailed technical specifications.
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