N-channel power MOSFET featuring 40V drain-source voltage and 75A continuous drain current. Offers low 5.5mΩ drain-source on-resistance and 140W maximum power dissipation. Designed for surface mounting in a D2PAK package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 16ns and fall time of 77ns.
PackageD2PAK
Current Rating75A
MountingSurface Mount
Power140W
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Technical Specifications
International Rectifier IRF4104SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 120A |
| Current Rating | 75A |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 5.5MR |
| Fall Time | 77ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 3nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Surface Mount |
| Power Dissipation | 140W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 75V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF4104SPBF Datasheet
Download the complete datasheet for International Rectifier IRF4104SPBF to view detailed technical specifications.
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