N-channel power MOSFET featuring 40V drain-source voltage and 75A continuous drain current. Offers low 5.5mΩ drain-source on-resistance and 140W maximum power dissipation. Designed for surface mounting in a D2PAK package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 16ns and fall time of 77ns.
PackageD2PAK
Current Rating75A
MountingSurface Mount
Power140W
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Technical Specifications
International Rectifier IRF4104SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
120A
Current Rating
75A
Drain to Source Resistance
5.5mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
5.5MR
Fall Time
77ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
3nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Surface Mount
Power Dissipation
140W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
38ns
Turn-On Delay Time
16ns
DC Rated Voltage
75V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF4104SPBF Datasheet
Download the complete datasheet for International Rectifier IRF4104SPBF to view detailed technical specifications.
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