International Rectifier
IRF430
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
PackageTO-204AA
MountingThrough Hole
Power75W
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Technical Specifications
International Rectifier IRF430 technical specifications.
General
Package/Case
TO-204AA
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
500V
Dual Supply Voltage
500V
Gate to Source Voltage (Vgs)
20V
Lead Pitch
11mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
75W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Power Dissipation
75W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
Termination
Through Hole
Weight
0.012kg
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF430 Datasheet
Download the complete datasheet for International Rectifier IRF430 to view detailed technical specifications.
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