International Rectifier
IRF460
Power Field-Effect Transistor, 21A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
PackageTO-3
MountingThrough Hole
Power300W
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Technical Specifications
International Rectifier IRF460 technical specifications.
General
Package/Case
TO-3
Continuous Drain Current (ID)
21A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
500V
Dual Supply Voltage
500V
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Lead Pitch
11mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Packaging
Bulk
Power Dissipation
300W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
Termination
Through Hole
Weight
11.5g
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF460 Datasheet
Download the complete datasheet for International Rectifier IRF460 to view detailed technical specifications.
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