International Rectifier
IRF520NLPBF
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
Current Rating9.7A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF520NLPBF technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
9.7A
Current Rating
9.7A
Drain to Source Voltage (Vdss)
100V
Input Capacitance
330pF
Lead Free
Lead Free
Max Power Dissipation
3.8W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Rds On Max
200mR
RoHS Compliant
Yes
Series
HEXFET®
DC Rated Voltage
100V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF520NLPBF Datasheet
Download the complete datasheet for International Rectifier IRF520NLPBF to view detailed technical specifications.
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