International Rectifier
IRF520NPBF
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
PackageTO-220AB
Current Rating9.7A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF520NPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
9.7A
Current Rating
9.7A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
200mR
Dual Supply Voltage
100V
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
330pF
Lead Free
Lead Free
Lead Pitch
2.54mm
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
48W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
32ns
Turn-On Delay Time
4.5ns
DC Rated Voltage
100V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF520NPBF Datasheet
Download the complete datasheet for International Rectifier IRF520NPBF to view detailed technical specifications.
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