N-Channel Power MOSFET, D2PAK package, featuring 100V drain-source breakdown voltage and 9.7A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 200mR at a nominal Vgs of 4V. With a maximum power dissipation of 48W and operating temperature range of -55°C to 175°C, it is designed for surface mounting. Includes fast switching characteristics with turn-on delay of 4.5ns and fall time of 23ns. RoHS compliant and lead-free.
PackageD2PAK
Current Rating9.7A
MountingSurface Mount
Power3.8W
Quick Jump:
Technical Specifications
International Rectifier IRF520NSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
9.7A
Current Rating
9.7A
Drain to Source Breakdown Voltage
100V
Drain to Source Voltage (Vdss)
100V
Fall Time
23ns
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
48W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
On-State Resistance
200mR
Packaging
Rail/Tube
Power Dissipation
3.8W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
32ns
Turn-On Delay Time
4.5ns
DC Rated Voltage
100V
Width
10.16mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF520NSPBF Datasheet
Download the complete datasheet for International Rectifier IRF520NSPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
