N-Channel Power MOSFET, D2PAK package, featuring 100V drain-source breakdown voltage and 9.7A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 200mR at a nominal Vgs of 4V. With a maximum power dissipation of 48W and operating temperature range of -55°C to 175°C, it is designed for surface mounting. Includes fast switching characteristics with turn-on delay of 4.5ns and fall time of 23ns. RoHS compliant and lead-free.
PackageD2PAK
Current Rating9.7A
MountingSurface Mount
Power3.8W
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Technical Specifications
International Rectifier IRF520NSPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 9.7A |
| Current Rating | 9.7A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| On-State Resistance | 200mR |
| Packaging | Rail/Tube |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 4.5ns |
| DC Rated Voltage | 100V |
| Width | 10.16mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF520NSPBF Datasheet
Download the complete datasheet for International Rectifier IRF520NSPBF to view detailed technical specifications.
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