International Rectifier
IRF520NSTRRPBF
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
International Rectifier IRF520NSTRRPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 9.7A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 330pF |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF520NSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF520NSTRRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.