International Rectifier
IRF5210L
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
PackageTO-262-3
Current Rating-40A
MountingThrough Hole
Power200W
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Technical Specifications
International Rectifier IRF5210L technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
40A
Current Rating
-40A
Drain to Source Breakdown Voltage
-100V
Drain to Source Voltage (Vdss)
100V
Input Capacitance
2.7nF
Lead Free
Contains Lead
Max Power Dissipation
3.8W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
200W
Rds On Max
60mR
RoHS Compliant
No
DC Rated Voltage
-100V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF5210L Datasheet
Download the complete datasheet for International Rectifier IRF5210L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.